74HCU04 Datasheet, PDF (4/7 Pages) NXP Semiconductors – Hex inverter

Philips Semiconductors
Hex inverter
Product specification
74HCU04
DC CHARACTERISTICS FOR 74HCU
Voltages are referenced to GND (ground = 0 V)
SYMBOL
PARAMETER
T_amb(°C)
TEST CONDITIONS
74HCU
+25
-40 to +85
−40 to
+125
UNIT _VCC
(V)
V_I
OTHER
min. typ. max. min. max. min. max.
V_IH
HIGH level input voltage 1.7 1.4
1.7
1.7
V 2.0
3.6 2.6
3.6
3.6
4.5
4.8 3.4
4.8
4.8
6.0
V_IL
LOW level input voltage
0.6 0.3
0.3
0.3 V 2.0
1.9 0.9
0.9
0.9
4.5
2.6 1.2
1.2
1.2
6.0
V_OH
HIGH level output
1.8 2.0
1.8
1.8
voltage
4.0 4.5
4.0
4.0
5.5 6.0
5.5
5.5
V_OH
HIGH level output
3.98 4.32
3.84
3.7
voltage
5.48 5.81
5.34
5.2
V
2.0 V_IH −I_O = 20 µA
4.5 or −I_O = 20 µA
6.0 V_IL −I_O = 20 µA
V
4.5 V_CC −I_O = 4.0 mA
6.0 or −I_O = 5.2 mA
GND
V_OL
LOW level output
voltage
V_OL
LOW level output
voltage
0 0.2
0 0.5
0 0.5
0.15 0.26
0.16 0.26
0.2
0.5
0.5
0.33
0.33
0.2 V
0.5
0.5
0.4 V
0.4
2.0 V_IH
4.5 or
6.0 V_IL
I_O = 20 µA
I_O = 20 µA
I_O = 20 µA
4.5 V_CC I_O = 4.0 mA
6.0 or I_O = 5.2 mA
GND
±I_I
input leakage current
0.1
1.0
1.0 µA 6.0 V_CC
or
GND
I_CC
quiescent supply
current
2.0
20.0
40.0 µA 6.0 V_CC I_O = 0
or
GND
September 1993
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