1PS76SB10 Datasheet, PDF (4/5 Pages) NXP Semiconductors – Schottky barrier diode

Philips Semiconductors
Schottky barrier diode
GRAPHICAL DATA
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IF
(mA)
10 ²
(1) (2) (3)
MSA892
10
(1) (2) (3)
1
10 ¹
0
0.4
(1) T_amb = 125 °C.
(2) T_amb = 85 °C.
(3) T_amb = 25 °C.
0.8
1.2
VF (V)
Fig.2 Forward current as a function of forward
voltage; typical values.
15
Cd
(pF)
10
MSA891
Product specification
1PS76SB10
10 ³
IR
(µA)
10 ²
10
MSA893
(1)
(2)
1
(3)
10 ¹
0
10
20 _{VR (V)} 30
(1) T_amb = 125 °C.
(2) T_amb = 85 °C.
(3) T_amb = 25 °C.
Fig.3 Reverse current as a function of reverse
voltage; typical values.
5
0
0
10
20 _{V R (V)} 30
f = 1 MHz; T_amb = 25 °C.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
1996 Oct 14
4