1PS300_15 Datasheet, PDF (4/11 Pages) NXP Semiconductors – Dual high-speed switching diode

NXP Semiconductors
1PS300
Dual high-speed switching diode
300
I_F
(mA)
200
100
006aac851
(1)
(2) (3)
10²
I_R
(μA)
10
(1)
1
(2)
(3)
10^−1
mbg380
0
0.0
0.5
1.0
1.5
2.0
V_F (V)
(1) T_j = 150 C; typical values
(2) T_j = 25 C; typical values
(3) T_j = 25 C; maximum values
Fig 1. Forward current as a function of forward
voltage
2.5
C_d
(pF)
2.0
mbh191
1.5
1.0
0.5
0
0
5
10
15
f = 1 MHz; T_amb = 25 C
20
25
V_R (V)
Fig 3. Diode capacitance as a function of reverse
voltage; typical values
10^−2
0
100
T_j (°C)
200
(1) V_R = 80 V; maximum values
(2) V_R = 80 V; typical values
(3) V_R = 25 V; typical values
Fig 2. Reverse current as a function of junction
temperature
300
I_F
(mA)
200
(1)
mbg443
(2)
100
0
0
100
T_amb (°C)
200
FR4 PCB, standard footprint
(1) single diode loaded
(2) double diode loaded
Fig 4. Forward current as a function of ambient
temperature; derating curves
1PS300
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 5 March 2012
© NXP B.V. 2012. All rights reserved.
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