1PS181 Datasheet, PDF (4/6 Pages) NXP Semiconductors – High-speed double diode

Philips Semiconductors
High-speed double diode
GRAPHICAL DATA
300
IF
(mA)
200
MBD033
single diode loaded
double diode loaded
100
handbook³, ⁰h⁰alfpage
IF
(mA)
200
100
Product specification
1PS181
MBG382
(1)
(2) (3)
0
0
100
Tamb ( ^oC) ²⁰⁰
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible continuous forward
current as a function of ambient temperature.
0
0
1
VF (V)
2
(1) T_j = 150 °C; typical values.
(2) T_j = 25 °C; typical values.
(3) T_j = 25 °C; maximum values.
Fig.3 Forward current as a function of
forward voltage.
handbook¹, ⁰ha²lfpage
IR
(µA)
10
(1)
1
(2)
(3)
MBG380
10 ¹
10 ²
0
100
Tj (^oC)
200
(1) V_R = 80 V; maximum values.
(2) V_R = 80 V; typical values.
(3) V_R = 25 V; typical values.
Fig.4 Reverse current as a function of
junction temperature.
1996 Sep 03
handbook², ^.h⁵alfpage
Cd
(pF)
2.0
MBH191
1.5
1.0
0.5
0
0
5
10
15
20
25
VR (V)
f = 1 MHz; T_j = 25 °C.
Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
4