TZA3036 Datasheet, PDF (3/15 Pages) NXP Semiconductors – SDH/SONET STM1/OC3 transimpedance amplifier

Philips Semiconductors
6. Pinning information
6.1 Pinning
TZA3036
SDH/SONET STM1/OC3 transimpedance amplifier
3
2
1
V_CC
4
IDREF_MON 5
17 V_CC
16 IDREF_MON
AGC 6
OUTQ 7
TZA3036
15 AGC
14 OUT
OUT 8
13 OUTQ
GND 9
12 GND
GND 10
11 GND
Fig 2. Pin configuration
001aad076
6.2 Pin description
Table 2. Bonding pad description
Bonding pad locations with respect to the center of the die (see Figure 10); X and Y are in µm.
Symbol
Pad
X
Y
Type
Description
DREF
1
−493.6 140
output
bias voltage output for PIN diode; connect cathode of
PIN diode to pad 1 or pad 3
IPHOTO
2
−493.6 0
input
current input; anode of PIN diode should be connected
to this pad
DREF
3
−493.6 −140
output
bias voltage output for PIN diode; connect cathode of
PIN diode to pad 1 or pad 3
V_CC
4
IDREF_MON 5
−353.6
−213.6
−278.6
−278.6
supply
output
supply voltage; connect supply to pad 4 or pad 17
current output for RSSI measurements; connect a
resistor to pad 5 or pad 16 and ground
AGC
6
−73.6
−278.6
input
AGC voltage; use pad 6 or pad 15
OUTQ
7
66.4
−278.6
output
data output; complement of pad OUT; use pad 7 or pad
13
OUT
8
206.4
−278.6
output
data output; use pad 8 or pad 14 ^[1]
GND
9
346.4
−278.6
ground
ground; connect together pads 9, 10, 11 and 12 as
many as possible
GND
10
486.4
−278.6
ground
ground; connect together pads 9, 10, 11 and 12 as
many as possible
TZA3036_1
Product data sheet
Rev. 01 — 24 March 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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