SA601 Datasheet, PDF (3/11 Pages) NXP Semiconductors – Low voltage LNA and mixer - 1GHz

Philips Semiconductors RF Communications Products
Low voltage LNA and mixer - 1GHz
Product specification
SA601
AC ELECTRICAL CHARACTERISTICS
V_CC = +3V, T_A = 25°C; LO_IN = -7dBm @ 964MHz; unless otherwise stated.
SYMBOL
PARAMETER
TEST CONDITIONS
S₂₁
∆S₂₁/∆T
∆S₂₁/∆f
S₁₂
S₁₁
S₂₂
P_-1dB
IP3
NF
Amplifier gain
Gain temperature sensitivity
Gain frequency variation
Amplifier reverse isolation
Amplifier input match¹
Amplifier output match¹
Amplifier input 1dB gain compression
Amplifier input third order intercept
Amplifier noise figure
881MHz
881MHz
800MHz - 1.2GHz
881MHz
881MHz
881MHz
881MHz
f₂ – f₁ = 25kHz, 881MHz
881MHz
VG_C
Mixer voltage conversion gain: R_P = R_L = 1kΩ
f_S = 881MHz, f_LO = 964MHz,
f_IF = 83MHz
PG_C
S_11M
Mixer power conversion gain: R_P = R_L = 1kΩ
Mixer input match¹
f_S = 881MHz, f_LO = 964MHz,
f_IF = 83MHz
881MHz
NF_M
Mixer SSB noise figure
881MHz
P_-1dB Mixer input 1dB gain compression
881MHz
IP3_M
Mixer input third order intercept
f₂ – f₁ = 25kHz, 881MHz
IP_2INT Mixer input second order intercept
881MHz
P_RFM-IF Mixer RF feedthrough
881MHz
P_LO-IF LO feedthrough to IF
881MHz
P_LO-RFM LO to mixer input feedthrough
881MHz
P_LO-RF LO to LNA input feedthrough
881MHz
P_LNA–RFM LNA output to mixer input
881MHz
P_RFM–LO Mixer input to LO feedthrough
881MHz
LO_IN
LO drive level
964MHz
NOTE:
1. Simple L/C elements are needed to achieve specified return loss.
LIMITS
-3σ
TYP
+3σ
UNITS
10
11.5
13
dB
0.003
dB/°C
0.01
dB/MHz
-20
dB
-10
dB
-10
dB
-16
dBm
-3.5
-2
-0.5
dBm
1.3
1.6
1.9
dB
18.0
19.5
21.0
dB
5.0
6.5
8.0
dB
-10
dB
8.0
9.5
11.0
dB
-13
dBm
-3.5
-2
-0.5
dBm
12
dBm
-7
dB
-25
dB
-38
dB
-40
dB
-40
dB
-23
dB
-7
dBm
December 15, 1994
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