SA57608 Datasheet, PDF (3/10 Pages) NXP Semiconductors – One-cell Lithium-ion battery protection with over/undercharge and overcurrent protection

Philips Semiconductors
One-cell Lithium-ion battery protection with
over/undercharge and overcurrent protection
Product data
SA57608
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
DESCRIPTION
VERSION
SA57608XD
Plastic small outline package; 6 leads; body width 1.8 mm
SOP004
NOTE:
The device has six protection parameter options, indicated by the X on the order code, and defined in the following table.
TEMPERATURE
RANGE
–20 to +85 °C
TYPICAL PROTECTION PARAMETERS
Part Number
Overcharge
detection voltage (V)
SA57608Y
4.350 ±0.050
SA57608B
4.280 ±0.025
SA57608C
4.295 ±0.025
SA57608D
4.350 ±0.050
SA57608E
4.275 ±0.025
SA57608G
4.280 ±0.025
Overcharge detection
hysteresis voltage (mV)
180
180
150
180
200
200
Over-discharge
detection voltage (V)
2.30 ±0.070
2.30 ±0.058
2.30 ±0.058
2.30 ±0.070
2.30 ±0.058
2.30 ±0.058
Overcurrent
detection voltage (mV)
150 ±30
75 ±30
200 ±30
200 ±30
100 ±30
100 ±30
Part number marking
Each device is marked with a four letter code. The first three letters
designate the product. The fourth letter, represented by ‘x’, is a date
tracking code.
Part number
SA57608YD
SA57608BD
SA57608CD
SA57608DD
SA57608ED
SA57608GD
Marking
AGXx
AGYx
AGZx
AHAx
AHBx
AHDx
PIN CONFIGURATION
DF ₁
6 ^GND
VM ₂
5
V_CC
CF
3
4
C_DLY
SL01569
Figure 2. Pin configuration.
PIN DESCRIPTION
PIN SYMBOL DESCRIPTION
1 DF
Discharge detection pin. This drives the gate of the discharge N-ch FET.
2 VM
Monitor pin. Detects overcurrent and the presence of a charger.
3 CF
Charge FET pin. This drives the gate of the charge control N-ch FET.
4
C_DLY
5 V_CC
6 GND
Charge Time Delay pin. The capacitor connected to this pin sets the delay.
Positive supply voltage input pin. Connect to positive terminal of the cell.
Ground pin. Connect to negative terminal of the cell.
MAXIMUM RATINGS
SYMBOL
PARAMETER
V_IN
V_CF(max)
V_VM(max)
T_opr
T_stg
P_D
Input voltage
CF pin voltage
VM pin voltage
Operating ambient temperature range
Storage temperature
Power dissipation
MIN.
–0.3
V_CC – 28
V_CC – 28
–40
–40
–
MAX.
+12
V_CC + 0.3
V_CC + 0.3
+85
+125
150
UNIT
V
V
V
°C
°C
mW
2003 Oct 29
3