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SA5219 Datasheet, PDF (3/18 Pages) NXP Semiconductors – Wideband variable gain amplifier
Philips Semiconductors
Wideband variable gain amplifier
Product specification
SA5219
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
VCC
Supply voltage
Power dissipation, TA = 25oC (still air)1
PD
16-Pin Plastic DIP
16-Pin Plastic SO
RATING
-0.5 to +8.0
1450
1100
TJMAX
TSTG
Maximum operating junction temperature
Storage temperature range
150
-65 to +150
NOTES:
1. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance, θJA:
16-Pin DIP: θJA = 85°C/W
16-Pin SO: θJA = 110°C/W
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
VCC
Supply voltage
TA
Operating ambient temperature range
SA Grade
TJ
Operating junction temperature range
SA Grade
RATING
VCC1 = VCC2 = 4.5 to 7.0V
-40 to +85
-40 to +105
UNITS
V
mW
mW
°C
°C
UNITS
V
°C
°C
DC ELECTRICAL CHARACTERISTICS
TA = 25oC, VCC1 = VCC2 = +5V, VAGC = 1.0V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
ICC
Supply current
DC tested
36
AV
Voltage gain (single-ended in/single-ended out) DC tested, RL = 10kΩ
16
AV
Voltage gain (single-ended in/differential out)
DC tested, RL = 10kΩ
22
RIN
Input resistance (single-ended)
DC tested at ±50µA
0.8
ROUT
Output resistance (single-ended)
DC tested at ±1mA
35
VOS
Output offset voltage (output referred)
VIN
DC level on inputs
1.6
VOUT
DC level on outputs
1.9
PSRR
Output offset supply rejection ratio
18
VBG
Bandgap reference voltage
4.5V<VCC<7V
RBG = 10kΩ
1.2
RBG
Bandgap loading
2
VAGC
IBAGC
AGC DC control voltage range
AGC pin DC bias current
0V<VAGC<1.3V
LIMITS
TYP
43
19
25
1.2
60
+20
2.0
2.4
45
1.32
10
0-1.3
-0.7
MAX
50
22
28
1.6
80
±150
2.4
2.9
1.45
-6
UNIT
mA
dB
dB
kΩ
Ω
mV
V
V
dB
V
kΩ
V
µA
1997 Nov 07
3