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PZUXB Datasheet, PDF (3/12 Pages) NXP Semiconductors – Single Zener diodes in a SOD323F package
Philips Semiconductors
PZUxB series
Single Zener diodes in a SOD323F package
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
IF
forward current
-
IZSM
non-repetitive peak reverse
-
current
PZSM
non-repetitive peak reverse
[1] -
power dissipation
Ptot
total power dissipation
Tamb ≤ 25 °C [2] -
[3] -
Tj
junction temperature
-
Tamb
ambient temperature
−65
Tstg
storage temperature
−65
Max
Unit
200
mA
see Table 8
and 9
40
W
310
mW
550
mW
150
°C
+150
°C
+150
°C
[1] tp = 100 µs; square wave; Tj = 25 °C prior to surge
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
Conditions
in free air
Min Typ Max Unit
[1] -
-
400 K/W
[2] -
-
230 K/W
[3] -
-
55 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3] Soldering point of cathode tab.
7. Characteristics
Table 7. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VF
forward voltage IF = 10 mA
IF = 100 mA
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Min
Typ
Max Unit
[1] -
-
0.9
V
[1] -
-
1.1
V
PZUXB_SER_1
Product data sheet
Rev. 01 — 7 March 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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