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PZTA92 Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP high-voltage transistor | |||
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Philips Semiconductors
PNP high-voltage transistor
Product speciï¬cation
PZTA92
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
note 1
104
K/W
23
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see âThermal considerations for SOT223 in the General Part of associated
Handbookâ.
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
VCEsat
VBEsat
Cc
fT
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
transition frequency
Note
1. Pulse test: tp ⤠300 µs; δ ⤠0.02.
CONDITIONS
IE = 0; VCB = â200 V
IC = 0; VBE = â5 V
IC = â1 mA; VCE = â10 V; note 1
IC = â10 mA; VCE = â10 V; note 1
IC = â30 mA; VCE = â10 V; note 1
IC = â20 mA; IB = â2 mA
MIN.
â
â
25
40
25
â
IC = â20 mA; IB = â2 mA
â
IE = 0; VCB = â20 V; f = 1 MHz
â
IC = â10 mA; VCE = â20 V; f = 100 MHz 50
MAX.
â20
â100
â
â
â
â500
UNIT
nA
nA
mV
â900
6
â
mV
pF
MHz
1999 Apr 14
3
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