PZT4403 Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP switching transistor

Philips Semiconductors
PNP switching transistor
Product specification
PZT4403
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R_{th j-a}
R_{th j-s}
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
106
K/W
25
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm².
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
I_CBO
I_EBO
h_FE
V_CEsat
V_BEsat
C_c
C_e
f_T
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
CONDITIONS
MIN.
I_E = 0; V_CB = −40 V
−
I_C = 0; V_EB = −5 V
−
V_CE = −1 V; see Fig.2
I_C = −0.1 mA
30
I_C = −1 mA
60
I_C = −10 mA
100
I_C = −150 mA; note 1
100
V_CE = −2 V; I_C = −500 mA; note 1
20
I_C = −150 mA; I_B = −15 mA; note 1 −
I_C = −500 mA; I_B = −50 mA; note 1 −
I_C = −150 mA; I_B = −15 mA; note 1 −
I_C = −500 mA; I_B = −50 mA; note 1 −
I_E = i_e = 0; V_CB = −5 V; f = 1 MHz
−
I_C = i_c = 0; V_EB = −500 mV; f = 1 MHz −
I_C = −20 mA; V_CE = −10 V;
200
f = 100 MHz
Switching times (between 10% and 90% levels); see Fig.3
t_on
turn-on time
t_d
delay time
t_r
rise time
t_off
turn-off time
t_s
storage time
t_f
fall time
I_Con = −150 mA; I_Bon = 15 mA;
−
I_Boff = −15 mA; V_BB = 3.5 V;
−
V_CC = −29.5 V
−
−
−
−
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
MAX.
−50
−50
−
−
−
300
−
−400
−750
−950
−1 300
8.5
35
−
40
15
30
350
300
50
UNIT
nA
nA
mV
mV
mV
mV
pF
pF
MHz
ns
ns
ns
ns
ns
ns
1999 May 10
3