PZT4401 Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN switching transistor

Philips Semiconductors
NPN switching transistor
Product specification
PZT4401
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R_{th j-a}
R_{th j-s}
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
109
K/W
28
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm².
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
I_CBO
I_EBO
h_FE
V_CEsat
V_BEsat
C_c
C_e
f_T
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
I_E = 0; V_CB = 60 V
−
I_C = 0; V_EB = 6 V
−
V_CE = 1 V; see Fig.2
I_C = 0.1 mA
20
I_C = 1 mA
40
I_C = 10 mA
80
I_C = 150 mA; note 1
100
V_CE = 2 V; I_C = 500 mA; note 1
40
I_C = 150 mA; I_B = 15 mA; note 1
−
I_C = 500 mA; I_B = 50 mA; note 1
−
I_C = 150 mA; I_B = 15 mA; note 1
−
I_C = 500 mA; I_B = 50 mA; note 1
−
I_E = i_e = 0; V_CB = 5 V; f = 1 MHz
−
I_C = i_c = 0; V_EB = 500 mV; f = 1 MHz −
I_C = 20 mA; V_CE = 10 V; f = 100 MHz 250
Switching times (between 10% and 90% levels); see Fig.3
t_on
turn-on time
t_d
delay time
t_r
rise time
t_off
turn-off time
t_s
storage time
t_f
fall time
I_Con = 150 mA; I_Bon = 15 mA;
−
I_Boff = −15 mA; V_BB = −3.5 V;
−
V_CC = 29.5 V
−
−
−
−
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
MAX.
50
50
−
−
−
300
−
400
750
950
1 200
8
30
−
35
15
20
250
200
60
UNIT
nA
nA
mV
mV
mV
mV
pF
pF
MHz
ns
ns
ns
ns
ns
ns
1999 May 10
3