PZT3904 Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN switching transistor

Philips Semiconductors
NPN switching transistor
Product specification
PZT3904
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R_{th j-a}
R_{th j-s}
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
note 1
117
K/W
36
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm².
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I_CBO
I_EBO
h_FE
V_CEsat
V_BEsat
C_c
C_e
f_T
F
collector cut-off current
emitter cut-off current
DC current gain
saturation voltage
saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
I_E = 0; V_CB = 30 V
I_C = 0; V_EB = 6 V
V_CE = 1 V; (see Fig.2)
I_C = 0.1 mA
I_C = 1 mA
I_C = 10 mA
I_C = 50 mA
I_C = 100 mA
I_C = 10 mA; I_B = 1 mA
I_C = 50 mA; I_B = 5 mA
I_C = 10 mA; I_B = 1 mA
I_C = 50 mA; I_B = 5 mA
I_E = i_e = 0; V_CB = 5 V; f = 1 MHz
I_C = i_c = 0; V_EB = 500 mV; f = 1 MHz
I_C = 10 mA; V_CE = 20 V; f = 100 MHz
I_C = 100 µA; V_CE = 5 V; R_S = 1 kΩ;
f = 10 Hz to 15.7 kHz
Switching times (between 10% and 90% levels); (see Fig.3)
t_on
turn-on time
t_d
delay time
t_r
rise time
t_off
turn-off time
t_s
storage time
t_f
fall time
I_Con = 10 mA; I_Bon = 1 mA; I_Boff = −1 mA
MIN.
−
−
MAX.
50
50
UNIT
nA
nA
60
−
80
−
100
300
60
−
30
−
−
200
mV
−
200
mV
−
850
mV
−
950
mV
−
4
pF
−
8
pF
300
−
MHz
−
5
dB
−
65
ns
−
35
ns
−
35
ns
−
240
ns
−
200
ns
−
50
ns
1999 Apr 14
3