PZM-N Datasheet, PDF (3/12 Pages) NXP Semiconductors – Voltage regulator diodes

Philips Semiconductors
Voltage regulator diodes
Product specification
PZM-N series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
I_F
continuous forward current
I_ZSM
non-repetitive peak current
t_p = 100 µs; square wave;
T_amb = 25 °C prior to surge
P_tot
total power dissipation
T_amb = 25 °C
T_stg
storage temperature
T_j
operating junction temperature
MIN.
MAX.
−
250
see Tables 1 and 2
UNIT
mA
−
300
mW
−65
+150
°C
−
150
°C
THERMAL CHARACTERISTICS
SYMBOL
R_{th j-s}
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point T_s = 60 °C
VALUE UNIT
300
K/W
ELECTRICAL CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V_F
forward voltage
I_R
reverse current
PZM2.4N
PZM2.7N
PZM3.0N
PZM3.3N
PZM3.6N
PZM3.9N
PZM4.3N
PZM4.7N
PZM5.1N
PZM5.6N
PZM6.2N
PZM6.8N
PZM7.5N
PZM8.2N
PZM9.1N
PZM10N
PZM11N
PZM12N
PZM13N
PZM15N
PZM16N
CONDITIONS
I_F = 10 mA; see Fig.2
I_F = 100 mA; see Fig.2
V_R = 1 V
V_R = 1 V
V_R = 1 V
V_R = 1 V
V_R = 1 V
V_R = 1 V
V_R = 1 V
V_R = 1 V
V_R = 1.5 V
V_R = 2.5 V
V_R = 3.0 V
V_R = 3.5 V
V_R = 4.0 V
V_R = 5.0 V
V_R = 6.0 V
V_R = 7.0 V
V_R = 8.0 V
V_R = 9.0 V
V_R = 10.0 V
V_R = 11.0 V
V_R = 12.0 V
MAX.
0.9
1.1
UNIT
V
V
50
µA
20
µA
10
µA
5
µA
5
µA
3
µA
3
µA
3
µA
3
µA
2
µA
2
µA
2
µA
1
µA
700
nA
500
nA
200
nA
100
nA
100
nA
100
nA
70
nA
70
nA
1999 Jan 28
3