PXTA92 Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP high-voltage transistor

Philips Semiconductors
PNP high-voltage transistor
Product specification
PXTA92
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R_{th j-a}
R_{th j-s}
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
96
K/W
16
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm².
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I_CBO
I_EBO
h_FE
V_CEsat
V_BEsat
C_c
f_T
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
transition frequency
I_E = 0; V_CB = −200 V
I_C = 0; V_BE = −3 V
V_CE = −10 V; note 1
I_C = −1 mA
I_C = −10 mA
I_C = −30 mA
I_C = −20 mA; I_B = −2 mA
I_C = −20 mA; I_B = −2 mA
I_E = i_e = 0; V_CB = −20 V;
f = 1 MHz
I_C = −10 mA; V_CE = −20 V;
f = 100 MHz
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
MIN.
−
−
MAX.
−250
−100
UNIT
nA
nA
25
−
40
−
25
−
−
−500
mV
−900
mV
−
6
pF
50
−
MHz
1999 Apr 29
3