PXTA42 Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN high-voltage transistor

Philips Semiconductors
NPN high-voltage transistor
Product specification
PXTA42
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R_{th j-a}
R_{th j-s}
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
96
K/W
16
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm².
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
I_CBO
I_EBO
h_FE
V_CEsat
V_BEsat
C_re
f_T
collector cut-off current
I_E = 0; V_CB = 200 V
−
emitter cut-off current
I_C = 0; V_BE = 6 V
−
DC current gain
I_C = 1 mA; V_CE = 10 V
25
I_C = 10 mA; V_CE = 10 V
40
I_C = 30 mA; V_CE = 10 V
40
collector-emitter saturation voltage I_C = 20 mA; I_B = 2 mA
−
base-emitter saturation voltage
I_C = 20 mA; I_B = 2 mA
−
feedback capacitance
I_C = i_c = 0; V_CB = 20 V; f = 1 MHz −
transition frequency
I_C = 10 mA; V_CE = 20 V;
50
f = 100 MHz
MAX.
100
100
−
−
−
500
900
3
−
UNIT
nA
nA
mV
mV
pF
MHz
1999 Apr 26
3