PXT4401 Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN switching transistor

Philips Semiconductors
NPN switching transistor
Product specification
PXT4401
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R_{th j-a}
R_{th j-s}
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
100
K/W
20
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm².
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I_CBO
I_EBO
h_FE
V_CEsat
V_BEsat
C_c
C_e
f_T
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
I_E = 0; V_CB = 60 V
I_C = 0; V_EB = 6 V
V_CE = 1 V; (see Fig.2)
I_C = 0.1 mA
I_C = 1 mA
I_C = 10 mA
I_C = 150 mA; note 1
I_C = 500 mA; V_CE = 2 V; note 1
I_C = 150 mA; I_B = 15 mA; note 1
I_C = 500 mA; I_B = 50 mA; note 1
I_C = 150 mA; I_B = 15 mA; note 1
I_C = 500 mA; I_B = 50 mA; note 1
I_E =i_e = 0; V_CB = 5 V; f = 1 MHz
I_C =i_c = 0; V_EB = 500 mV; f = 1 MHz
I_C = 20 mA; V_CE = 10 V; f =100 MHz
Switching times (between 10% and 90% levels); (see Fig.3)
t_on
turn-on time
t_d
delay time
t_r
rise time
t_off
turn-off time
t_s
storage time
t_f
fall time
I_Con = 150 mA; I_Bon = 15 mA;
I_Boff = −15 mA
MIN.
−
−
20
20
40
80
100
40
−
−
−
−
−
−
250
−
−
−
−
−
−
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
MAX.
50
50
−
−
−
−
300
−
400
750
950
1.2
8
30
−
UNIT
nA
nA
mV
mV
mV
V
pF
pF
MHz
35
ns
15
ns
20
ns
250
ns
200
ns
60
ns
1999 Apr 14
3