PXT2907A Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP switching transistor

Philips Semiconductors
PNP switching transistor
Product specification
PXT2907A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R_{th j-a}
R_{th j-s}
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
97
K/W
17
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm².
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
I_CBO
I_EBO
h_FE
V_CEsat
V_BEsat
C_c
C_e
f_T
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
I_E = 0; V_CB = −50 V
−
I_E = 0; V_CB = −50 V; T_amb = 125 °C −
I_C = 0; V_EB = −5 V
−
I_C = −0.1 mA; V_CE = −1 V
75
I_C = −1 mA; V_CE = −1 V
100
I_C = −10 mA; V_CE = −1 V
100
I_C = −150 mA; V_CE = −2 V
100
I_C = −500 mA; V_CE = −2 V
50
I_C = −150 mA; I_B = −15 mA
−
I_C = −500 mA; I_B = −50 mA
−
I_C = −150 mA; I_B = −15 mA
−
I_C = −500 mA; I_B = −50 mA
−
I_E = i_e = 0; V_CB = −10 V; f = 1 MHz −
I_C = i_c = 0; V_EB = −500 mV; f = 1 MHz −
I_C = −20 mA; V_CE = −10 V;
200
f = 100 MHz
Switching times (between 10% and 90% levels); (see Fig.2)
t_on
turn-on time
t_d
delay time
t_r
rise time
t_off
turn-off time
t_s
storage time
t_f
fall time
I_Con = −150 mA; I_Bon = −15 mA;
−
I_Boff = 15 mA
−
−
−
−
−
MAX.
−10
−10
−50
−
−
−
300
−
−400
−1.6
−1.3
−2.6
8
35
−
UNIT
nA
µA
nA
mV
V
V
V
pF
pF
MHz
40
ns
12
ns
30
ns
365
ns
300
ns
65
ns
1999 Apr 14
3