PXB16050U Datasheet, PDF (3/12 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_CES
V_EBO
I_C
P_tot
T_stg
T_j
T_sld
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC )
total power dissipation
storage temperature
junction temperature
soldering temperature
open emitter
open base
R_BE = 0 Ω
open collector
T_mb = 75 °C
t ≤ 10 s; note 1
Note
1. Up to 0.2 mm from ceramic.
Product specification
PXB16050U
MIN.
−
−
−
−
−
−
−65
−
−
MAX.
45
15
45
3
6
67
+200
200
235
UNIT
V
V
V
V
A
W
°C
°C
°C
handboo¹k,⁰h⁰alfpage
Ptot
(W)
80
60
40
20
0
−50
0
MGL038
100 _{Tmb (°C)} 200
P_{tot max} = 67 W.
Fig.2 Power derating curve.
60
handbook, halfpage
PL
(W)
40
MGL037
20
0
0
2
4
6
8
Pi (W)
V_CC = 28 V; f = 1.65 GHz.
Fig.3 Load power as a function of input power
(see Fig.4).
1997 Feb 19
3