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PSMN7R6-100BSE_15 Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK
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NXP Semiconductors
PSMN7R6-100BSE
N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK
Symbol
VGS
ID
Parameter
gate-source voltage
drain current
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
IS
source current
ISM
peak source current
Avalanche Ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
VGS = 10 V; Tj = 25 °C; Fig. 1
[1]
VGS = 10 V; Tmb = 100 °C; Fig. 1
[1]
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4
Tmb = 25 °C; Fig. 2
Tmb = 25 °C
[1]
pulsed; tp ≤ 10 µs; Tmb = 25 °C
VGS = 10 V; Tj(init) = 25 °C; ID = 75 A;
Vsup ≤ 100 V; RGS = 50 Ω; unclamped;
Fig. 3
[1] Continuous current limited by package
150
ID
(A)
125
003aak744
120
Pder
(%)
100
80
Min Max Unit
-20 20
V
-
75
A
-
75
A
-
481 A
-
296 W
-55 175 °C
-55 175 °C
-
260 °C
-
75
A
-
481 A
-
426 mJ
03aa16
75
(1)
(1)
50
40
25
Fig. 1.
0
0
30
60
90 120 150 180
Tj (°C)
(1) Capped at 75A due to package
Continuous drain current as a function of
mounting base temperature
0
0
50
100
150
200
Tmb (°C)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN7R6-100BSE
Product data sheet
All information provided in this document is subject to legal disclaimers.
18 December 2012
© NXP B.V. 2012. All rights reserved
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