PN3439 Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN high-voltage transistors

Philips Semiconductors
NPN high-voltage transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
T_stg
T_j
T_amb
collector-base voltage
PN3439
PN3440
collector-emitter voltage
PN3439
PN3440
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
T_amb ≤ 25 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-a}
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
Product specification
PN3439; PN3440
MIN. MAX. UNIT
−
400
V
−
300
V
−
350
V
−
250
V
−
5
V
−
100
mA
−
200
mA
−
100
mA
−
500
mW
−65
+150 °C
−
150
°C
−65
+150 °C
VALUE
250
UNIT
K/W
1997 Sep 04
3