PN2907A Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP switching transistor

Philips Semiconductors
PNP switching transistor
Product specification
PN2907A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
T_stg
T_j
T_amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
T_amb ≤ 25 °C
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
−60
−60
−5
−600
−800
−200
500
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-a}
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
250
UNIT
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
I_CBO
I_EBO
h_FE
V_CEsat
V_BEsat
C_c
C_e
f_T
collector cut-off current
I_E = 0; V_CB = −50 V
−
I_E = 0; V_CB = −50 V; T_amb = 125 °C
−
emitter cut-off current
I_C = 0; V_EB = −5 V
−
DC current gain
I_C = −0.1 mA; V_CE = −10 V
75
I_C = −1 mA; V_CE = −10 V
100
I_C = −10 mA; V_CE = −10 V
100
I_C = −150 mA; V_CE = −10 V
100
I_C = −500 mA; V_CE = −10 V
50
collector-emitter saturation voltage I_C = −150 mA; I_B = −15 mA
−
I_C = −500 mA; I_B = −50 mA
−
base-emitter saturation voltage
I_C = −150 mA; I_B = −15 mA
−
I_C = −150 mA; I_B = −50 mA
−
collector capacitance
I_E = i_e = 0; V_CB = −10 V; f = 1 MHz
−
emitter capacitance
I_C = i_c = 0; V_EB = −2 V; f = 1 MHz
−
transition frequency
I_C = −50 mA; V_CE = −20 V; f = 100 MHz 200
MAX.
−10
−10
−50
−
−
−
300
−
−400
−1.6
−1.3
−2.6
8
30
−
UNIT
nA
µA
nA
mV
V
V
V
pF
pF
MHz
1997 May 05
3