PMEM4020PD Datasheet, PDF (3/11 Pages) NXP Semiconductors – PNP transistor/Schottky-diode module

Philips Semiconductors
PNP transistor/Schottky-diode module
Product specification
PMEM4020PD
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
PNP transistor
V_CBO
collector-base voltage
open emitter
−
V_CEO
collector-emitter voltage
open base
−
V_EBO
emitter-base voltage
open collector
−
I_C
collector current (DC)
note 1
−
note 2
−
note 3
−
T_s ≤ 55 °C; note 4
−
I_CM
peak collector current
−
I_BM
peak base current
−
P_tot
total power dissipation
T_amb ≤ 25 °C; note 1
−
T_amb ≤ 25 °C; note 2
−
T_amb ≤ 25 °C; note 3
−
T_s ≤ 55 °C; note 4
−
T_j
junction temperature
−
Schottky barrier diode
V_R
continuous reverse voltage
−
I_F
continuous forward current
−
I_FSM
non-repetitive peak forward current t = 8.3 ms half sinewave; JEDEC −
method
P_tot
total power dissipation
T_amb ≤ 25 °C; note 1
−
T_amb ≤ 25 °C; note 2
−
T_amb ≤ 25 °C; note 3
−
T_s ≤ 55 °C; note 4
−
T_j
junction temperature
note 2
−
Combined device
P_tot
total power dissipation
T_amb = 25 °C; note 2
−
T_stg
storage temperature
−65
T_amb
operating ambient temperature
note 2
−65
−40
V
−40
V
−5
V
−0.75 A
−1
A
−1.3
A
−2
A
−3
A
−1
A
295
mW
400
mW
500
mW
1000 mW
150
°C
20
V
1
A
5
A
295
mW
400
mW
500
mW
1000 mW
150
°C
600
mW
+150 °C
+150 °C
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint for SOT457.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pads for collector and
cathode both 1 cm².
3. Mounted on a ceramic printed-circuit board; single-sided copper; tinplated; standard footprint.
4. Solder point of collector or cathode tab.
2003 Nov 24
3