PMEG4002EL Datasheet, PDF (3/8 Pages) NXP Semiconductors – 40V, 0.2 A LOW V-f MEGA SCHOTTKY BARRIER RECTIFIER IN LEADLESS ULTRA SMALL SOD882 PACKAGE

Philips Semiconductors
PMEG4002EL
40 V, 0.2 A low V_F MEGA Schottky barrier rectifier
[1] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses P_R are a significant part of the total power losses. Nomograms for determining the reverse
power losses P_R and I_F(AV) rating will be available on request.
6. Thermal characteristics
Table 6:
Symbol
R_th(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction in free air
to ambient
Value
[1] [2] ₅₀₀
Unit
K/W
[1] Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 µm copper strip line.
[2] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses P_R are a significant part of the total power losses. Nomograms for determining the reverse
power losses P_R and I_F(AV) rating will be available on request.
7. Characteristics
Table 7: Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
V_F
continuous
see Figure 1
forward voltage
I_F = 0.1 mA
I_F = 1 mA
I_F = 10 mA
I_F = 100 mA
I_F = 200 mA
I_R
continuous
see Figure 2
reverse current
V_R = 25 V
V_R = 40 V
C_d
diode capacitance V_R = 1 V; f = 1 MHz;
see Figure 3
[1] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
Typ
190
250
320
440
520
[1]
0.3
0.7
14
Max
Unit
220
mV
290
mV
360
mV
500
mV
600
mV
0.5
µA
10
µA
20
pF
9397 750 12467
Product data sheet
Rev. 01 — 17 February 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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