PMEG3010EP_15 Datasheet, PDF (3/13 Pages) NXP Semiconductors – 1 A low VF MEGA Schottky barrier rectifier

NXP Semiconductors
PMEG3010EP
1 A low V_F MEGA Schottky barrier rectifier
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
T_j
junction temperature
-
T_amb
ambient temperature
−55
T_stg
storage temperature
−65
Max Unit
150
°C
+150 °C
+150 °C
[1] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.
[2] T_j = 25 °C prior to surge.
[3] Reflow soldering is the only recommended soldering method.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm².
6. Thermal characteristics
Table 6.
Symbol
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
R_th(j-sp)
thermal resistance from
junction to solder point
Min Typ Max Unit
[1][2]
[3] _-
-
200 K/W
[4] _-
-
120 K/W
[5] _-
-
60 K/W
[6] _-
-
12 K/W
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P_R are a significant part of the total power losses.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm².
[5] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.
[6] Soldering point of cathode tab.
PMEG3010EP_1
Product data sheet
Rev. 01 — 30 December 2008
© NXP B.V. 2009. All rights reserved.
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