PMEG3002TV_15 Datasheet, PDF (3/10 Pages) NXP Semiconductors – 0.2 A very low VF MEGA Schottky barrier dual rectifier in SOT666 package

NXP Semiconductors
PMEG3002TV
0.2 A very low V_F MEGA Schottky barrier dual rectifier
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per diode
V_R
I_F
I_FRM
I_FSM
P_tot
reverse voltage
-
forward current
T_amb ≤ 25 °C
[1] _-
repetitive peak forward current t_p ≤ 1 ms; δ ≤ 0.25
-
non-repetitive peak forward square wave;
[1] _-
current
t_p = 8 ms
total power dissipation
T_amb ≤ 25 °C
[1] _-
[2] _-
Per device
P_tot
total power dissipation
T_amb ≤ 25 °C
[1] _-
[2] _-
T_j
junction temperature
-
T_amb ambient temperature
−65
T_stg
storage temperature
−65
Max
Unit
30
V
0.2
A
1
A
2.5
A
200
mW
300
mW
300
mW
400
mW
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm².
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Per device
R_th(j-a)
thermal resistance from
junction to ambient
Conditions
in free air
R_th(j-sp)
thermal resistance from
junction to solder point
Min Typ Max Unit
[1][2] _-
-
416 K/W
[1][3] _-
-
318 K/W
[4] _-
-
195 K/W
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P_R are a significant part of the total power losses. Nomograms for determining the reverse
power losses P_R and I_F(AV) rating are available on request.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm².
[4] Soldering point of cathode tab.
PMEG3002TV_2
Product data sheet
Rev. 02 — 15 January 2010
© NXP B.V. 2010. All rights reserved.
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