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| PMEG2015EA Datasheet, PDF (3/7 Pages) NXP Semiconductors – Low VF (MEGA) Schottky barrier diode | |||
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Philips Semiconductors
Low VF (MEGA) Schottky barrier diode
Product speciï¬cation
PMEG2015EA
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
VF
continuous forward voltage
IR
continuous reverse current
Cd
diode capacitance
Note
1. Pulse test: tp = 300 µs; δ = 0.02.
CONDITIONS
see Fig.2; note 1
IF = 10 mA
IF = 100 mA
IF = 1000 mA
IF = 1500 mA
see Fig.3; note 1
VR = 5 V
VR = 8 V
VR = 15 V
VR = 5 V; f = 1 MHz;
see Fig.4
TYP. MAX. UNIT
240
270
mV
300
350
mV
480
550
mV
560
660
mV
5
10
µA
7
20
µA
10
50
µA
19
25
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth(j-a)
Rth(j-s)
thermal resistance from junction to ambient
thermal resistance from junction to solder point
note 1
note 2
note 3
Notes
1. Refer to SC-76 (SOD323) standard mounting conditions.
2. Device mounted on a printed-circuit board with copper clad 10 x 10 mm.
3. Soldering point of cathode tab.
VALUE
450
210
90
UNIT
K/W
K/W
K/W
2004 Feb 03
3
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