PMEG2005AEV Datasheet, PDF (3/10 Pages) NXP Semiconductors – Very low VF MEGA Schottky barrier rectifiers

NXP Semiconductors
Very low V_F MEGA
Schottky barrier rectifiers
Product data sheet
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
V_R
continuous reverse voltage
PMEG2005AEV
PMEG3005AEV
PMEG4005AEV
I_F
I_FRM
I_FSM
T_j
T_amb
T_stg
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
junction temperature
operating ambient temperature
storage temperature
CONDITIONS
MIN. MAX. UNIT
−
−
−
note 1
−
t_p ≤ 1 ms; δ ≤ 0.5; note 2
−
t_p = 8 ms; square wave; note 2 −
note 3
−
note 3
−65
−65
20
V
30
V
40
V
0.5
A
3.5
A
10
A
150
°C
+150 °C
+150 °C
Notes
1. Refer to SOT666 standard mounting conditions.
2. Only valid if pins 3 and 4 are connected in parallel.
3. For Schottky barrier diodes thermal runaway has to be considered, as in some applications, the reverse power losses
(P_R) are a significant part of the total power losses. Nomograms for determination of the reverse power losses P_R
and I_F(AV) rating will be available on request.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to
ambient
R_{th j-s}
thermal resistance from junction to
soldering point
CONDITIONS
in free air; notes 1 and 2
in free air; notes 2 and 3
note 4
VALUE
405
215
80
UNIT
K/W
K/W
K/W
Notes
1. Refer to SOT666 standard mounting conditions.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
P_R are a significant part of the total power losses. Nomograms for determination of the reverse power losses P_R and
I_F(AV) rating will be available on request.
3. Device mounted on an FR4 printed-circuit board with copper clad 10 × 10 mm.
4. Solder point of cathode tab.
2003 Aug 20
3