PMBTH81 Datasheet, PDF (3/7 Pages) NXP Semiconductors – PNP 1 GHz switching transistor

Philips Semiconductors
PNP 1 GHz switching transistor
Product specification
PMBTH81
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
T_s = 45 °C (note 1)
MIN. MAX. UNIT
−
20
V
−
20
V
−
3
V
−
40
mA
−
400 mW
−65 150 °C
−
150 °C
THERMAL RESISTANCE
SYMBOL
PARAMETER
R_{th j-s}
from junction to soldering point (note 1)
Note
1. T_s is the temperature at the soldering point of the collector tab.
THERMAL RESISTANCE
260 K/W
CHARACTERISTICS
T_j = 25 °C
SYMBOL
PARAMETER
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
V_{CE sat}
V_{BE on}
I_CBO
I_EBO
h_FE
C_ce
C_cb
f_T
collector-base breakdown voltage
collector-emitter breakdown
voltage
emitter-base breakdown voltage
collector-emitter saturation voltage
base-emitter ON voltage
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter capacitance
collector-base capacitance
transition frequency
CONDITIONS
open emitter; I_C = 10 µA; I_E = 0
open base; I_C = 1 mA; I_B = 0
open collector; I_E = 10 µA; I_C = 0
I_C = 5 mA; I_B = 0.5 mA
V_CE = 10 V; I_C = 5 mA
V_CB = 10 V; I_E = 0
V_EB = 2 V; I_C = 0
V_CE = 10 V; I_C = 5 mA
V_CB = 10 V; I_B = 0; f = 1 MHz
V_CB = 10 V; I_E = 0; f = 1 MHz
V_CE = 10 V; I_C = 5 mA;
f = 100 MHz; T_amb = 25 °C
MIN.
20
20
MAX. UNIT
−
V
−
V
3
−
V
−
0.5 V
−
0.9 V
−
100 nA
−
100 nA
60
−
−
0.65 pF
−
0.85 pF
600 −
MHz
September 1995
3