PMBT5088 Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN general purpose transistor

Philips Semiconductors
NPN general purpose transistor
Product specification
PMBT5088
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
I_EBO
emitter cut-off current
h_FE
DC current gain
V_CEsat
V_BEsat
C_c
C_e
F
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
noise figure
CONDITIONS
I_E = 0; V_CB = 20 V
I_C = 0; V_EB = 3 V
I_C = 100 µA; V_CE = 5 V
I_C = 1 mA; V_CE = 5 V
I_C = 10 mA; V_CE = 5 V
I_C = 10 mA; I_B = 1 mA
MIN.
−
−
300
350
300
−
MAX.
50
50
900
−
−
500
UNIT
nA
nA
mV
I_C = 10 mA; I_B = 1 mA
−
I_E = i_e = 0; V_CB = 5 V; f = 1 MHz
−
I_C = i_c = 0; V_EB = 500 mV; f = 1 MHz −
I_C = 100 µA; V_CE = 5 V; R_S = 1 kΩ; −
f = 10 Hz to 15.7 kHz
800
mV
4
pF
10
pF
3
dB
1999 Apr 15
3