PIMZ2 Datasheet, PDF (3/9 Pages) NXP Semiconductors – NPN/PNP general-purpose double transistors

Philips Semiconductors
PIMZ2; PUMZ2
NPN/PNP general-purpose double transistors
5. Limiting values
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
Per transistor; for the PNP transistor with negative polarity
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
collector-base voltage
open emitter
-
collector-emitter voltage open base
-
emitter-base voltage
open collector
-
collector current (DC)
-
peak collector current
-
peak base current
-
total power dissipation
T_amb ≤ 25 °C
SOT457
[1] _-
60
V
50
V
7
V
150
mA
200
mA
100
mA
200
mW
SOT363
[1] _-
180
mW
T_stg
T_j
T_amb
Per device
storage temperature
junction temperature
ambient temperature
−65
+150
°C
-
150
°C
−65
+150
°C
P_tot
total power dissipation
T_amb ≤ 25 °C
SOT457
[1] _-
300
mW
SOT363
[1] _-
300
mW
[1] Device mounted on an FR4 printed-circuit board.
6. Thermal characteristics
Table 7: Thermal characteristics
Symbol Parameter
Per transistor
R_th(j-a)
thermal resistance from
junction to ambient
SOT457
SOT363
Per device
R_th(j-a)
thermal resistance from
junction to ambient
SOT457
SOT363
Conditions
T_amb ≤ 25 °C
T_amb ≤ 25 °C
[1] Device mounted on an FR4 printed-circuit board.
Min Typ Max Unit
[1] _-
-
625 K/W
[1] _-
-
694 K/W
[1] _-
-
417 K/W
[1] _-
-
417 K/W
9397 750 13966
Product data sheet
Rev. 05 — 24 November 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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