PHX4N60E Datasheet, PDF (3/8 Pages) NXP Semiconductors – PowerMOS transistors Avalanche energy rated

Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Product specification
PHX4N60E
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
T_j = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
I_S
Continuous source current T_hs = 25˚C
(body diode)
I_SM
Pulsed source current (body T_hs = 25˚C
diode)
V_SD
Diode forward voltage
I_S = 4.5 A; V_GS = 0 V
t_rr
Reverse recovery time
I_S = 4.5 A; V_GS = 0 V; dI/dt = 100 A/µs
Q_rr
Reverse recovery charge
MIN. TYP. MAX. UNIT
-
- 4.5 A
-
- 18 A
-
- 1.2 V
- 480 - ns
-
4
- µC
December 1998
3
Rev 1.200