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| PHT8N06T Datasheet, PDF (3/10 Pages) NXP Semiconductors – TrenchMOS transistor Standard level FET | |||
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Philips Semiconductors
TrenchMOS⢠transistor
Standard level FET
Product specification
PHT8N06T
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER
WDSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
ID = 2.5 A; VDD ⤠25 V;
VGS = 10 V; RGS = 50 â¦; Tsp = 25 ËC
MIN.
-
TYP.
-
MAX. UNIT
30 mJ
December 1997
3
Rev 1.100
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