PHP3N50 Datasheet, PDF (3/7 Pages) NXP Semiconductors – PowerMOS transistor

Philips Semiconductors
PowerMOS transistor
Product specification
PHP3N50
120 ^PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25 ˚C} = f(T_mb)
ID%
120
Normalised Current Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅I_D/I_{D 25 ˚C} = f(T_mb); conditions: V_GS ≥ 10 V
ID, Drain current (Amps)
100
PHP3N50
10
RDS(ON) ^{= VDS/ID}
tp = 10 us
100 us
1
DC
1 ms
10 ms
100 ms
0.1
10
100
1000
VDS, Drain-source voltage (Volts)
10000
Fig.3. Safe operating area. T_mb = 25 ˚C
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
Zth j-mb / (K/W)
10
PHP2N60
D=
1
0.5
0.2
0.1
0.1 0.05
0.02
P_D
tp
D
=
tp
T
0
0.01
1E-05
1E-03
t/s
T
t
1E-01
1E+01
Fig.4. Transient thermal impedance.
Z_{th j-mb} = f(t); parameter D = t_p/T
8 ^{ID, Drain current (Amps)}
Tj = 25 C
7
6
5
4
PHP3N50
7 V ^{10 V}
6V
5.5 V
3
5V
2
VGS = 4.5 V
1
0
0
5
10
15
20
25
30
VDS, Drain-Source voltage (Volts)
Fig.5. Typical output characteristics.
I_D = f(V_DS); parameter V_GS
6 ^{RDS(on), Drain-Source on resistance (Ohms)}
PHP3N50
4.5 V
5 V 5.5 V
VGS = 6 V
10 V
5
7V
Tj = 25 C
4
3
2
1
0
0
1
2
3
4
5
6
7
8
ID, Drain current (Amps)
Fig.6. Typical on-state resistance.
R_DS(ON) = f(I_D); parameter V_GS
February 1997
3
Rev 1.000