PHN210 Datasheet, PDF (3/7 Pages) NXP Semiconductors – Dual N-channel enhancement mode TrenchMOS transistor

Philips Semiconductors
Dual N-channel enhancement mode
TrenchMOS^TM transistor
Product specification
PHN210
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T_j = 25˚C, per MOSFET unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
I_S
Continuous source diode T_a = 25 ˚C
current (per MOSFET)
I_SM
Pulsed source diode current
(per MOSFET)
V_SD
Diode forward voltage
I_F = 1.25 A; V_GS = 0 V
t_rr
Reverse recovery time
I_F = 1.25 A; -dI_F/dt = 100 A/µs;
Q_rr
Reverse recovery charge V_GS = 0 V; V_R = 25 V
MIN. TYP. MAX. UNIT
-
- 2.2 A
-
- 14 A
- 0.82 1.2 V
- 69 - ns
- 55 - nC
120 ^PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tamb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25 ˚C} = f(T_a)
ID%
120
Normalised Current Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ambient temperature, Tamb (C)
Fig.2. Normalised continuous drain current.
ID% = 100⋅I_D/I_{D 25 ˚C} = f(T_a); conditions: V_GS ≥ 10 V
Peak Pulsed Drain Current, IDM (A)
100
10 ^{RDS(on) = VDS/ ID}
1
0.1
PHN210
tp = 10 us
100 us
1 ms
10 ms
100 ms
10 s
0.01
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Fig.3. Safe operating area. T_a = 25 ˚C
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
Peak Pulsed Drain Current, IDM (A)
100
D = 0.5
PHN210
10
0.2
0.1
0.05
0.02
1
P_{D tp} D = tp/T
0.1 _{single pulse}
0.01
1E-06
1E-05
1E-04
1E-03
1E-02
T
1E-01 1E+00 1E+01
Pulse width, tp (s)
Fig.4. Transient thermal impedance.
Z_{th j-a} = f(t); parameter D = t_p/T
February 1999
3
Rev 1.000