PESDXV4UF Datasheet, PDF (3/16 Pages) NXP Semiconductors – Very low capacitance unidirectional quadruple ESD protection diode arrays

NXP Semiconductors
PESDxV4UF/G/W
Very low capacitance quadruple ESD protection diode arrays
3. Ordering information
Table 4. Ordering information
Type number Package
Name
Description
PESD3V3V4UF XSON6
PESD5V0V4UF
plastic extremely thin small outline package;
no leads; 6 terminals; body 1 × 1.45 × 0.5 mm
PESD3V3V4UG SC-88A
plastic surface-mounted package; 5 leads
PESD5V0V4UG
PESD3V3V4UW -
plastic surface-mounted package; 5 leads
PESD5V0V4UW
Version
SOT886
SOT353
SOT665
4. Marking
Table 5. Marking codes
Type number
PESD3V3V4UF
PESD5V0V4UF
PESD3V3V4UG
PESD5V0V4UG
PESD3V3V4UW
PESD5V0V4UW
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Marking code^[1]
A7
A8
V1*
V2*
W1
W2
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
P_PP
I_PP
Per device
T_j
T_amb
T_stg
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
Conditions
t_p = 8/20 µs
t_p = 8/20 µs
Min
[1][2][3] _-
[1][2][3] _-
-
−65
−65
Max Unit
16
W
1.5
A
150
°C
+150 °C
+150 °C
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] For PESDxV4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5.
[3] For PESDxV4UG and PESDxV4UW measured from pin 1, 3, 4 or 5 to pin 2.
PESDXV4UF_G_W_3
Product data sheet
Rev. 03 — 28 January 2008
© NXP B.V. 2008. All rights reserved.
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