PDTC144WU Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN resistor-equipped transistor

Philips Semiconductors
NPN resistor-equipped transistor
Product specification
PDTC144WU
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
V_I
I_O
I_CM
P_tot
T_stg
T_j
T_amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
T_amb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
MAX.
50
50
10
UNIT
V
V
V
−
+40
V
−
−10
V
−
100
mA
−
100
mA
−
200
mW
−65
+150
°C
−
150
°C
−65
+150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
625
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I_CBO
I_CEO
I_EBO
h_FE
V_CEsat
V_i(off)
V_i(on)
R1
collector cut-off current
I_E = 0; V_CB = 50 V
−
collector cut-off current
I_B = 0; V_CE = 30 V
−
I_B = 0; V_CE = 30 V; T_j = 150 °C −
emitter cut-off current
I_C = 0; V_EB = 5 V
−
DC current gain
I_C = 5 mA; V_CE = 5 V
60
collector-emitter saturation voltage I_C = 10 mA; I_B = 0.5 mA
−
input-off voltage
I_C = 100 µA; V_CE = 5 V
−
input-on voltage
I_C = 2 mA; V_CE = 0.3 V
4
input resistor
33
−
100 nA
−
1
µA
−
50
µA
−
110 µA
−
−
−
150 mV
1.7 1.2 mV
2.7 −
V
47
61
kΩ
RR-----21--
resistor ratio
0.37 0.47 0.57
C_c
collector capacitance
I_E = i_e = 0; V_CB = 10 V; f = 1 MHz −
−
2.5 pF
1999 May 25
3