PDTC143XT Datasheet, PDF(3/8 Page) NXP Semiconductors

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PDTC143XT Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN resistor-equipped transistor

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Philips Semiconductors

NPN resistor-equipped transistor

Product speciï¬cation

PDTC143XT

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-a

thermal resistance from junction to ambient note 1

Note

1. Refer to SOT23 standard mounting conditions.

VALUE

500

UNIT

K/W

CHARACTERISTICS

Tamb = 25 Â°C unless otherwise speciï¬ed.

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

ICBO

collector cut-off current

IE = 0; VCB = 50 V

100 nA

ICEO

collector cut-off current

IB = 0; VCE = 30 V

ÂµA

IB = 0; VCE = 30 V; Tj = 150 Â°C â

ÂµA

IEBO

emitter cut-off current

IC = 0; VEB = 5 V

600 ÂµA

hFE

DC current gain

IC = 10 mA; VCE = 5 V

VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA

100 mV

Vi(off)

input-off voltage

IC = 100 ÂµA; VCE = 5 V

0.3 V

Vi(on)

input-on voltage

IC = 20 mA; VCE = 0.3 V

2.5 â

input resistor

3.3 4.7 6.1 kâ¦

RR-----21--

resistor ratio

1.7 2.1 2.6

collector capacitance

IE = ie = 0; VCB = 10 V; f = 1 MHz â

2.5 pF

1999 Apr 20

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