PDTC124ET Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN resistor-equipped transistor

Philips Semiconductors
NPN resistor-equipped transistor
Product specification
PDTC124ET
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
V_I
I_O
I_CM
P_tot
T_stg
T_j
T_amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
T_amb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
MAX.
50
50
10
UNIT
V
V
V
−
+40
V
−
−10
V
−
100
mA
−
100
mA
−
250
mW
−65
+150 °C
−
150
°C
−65
+150 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
I_CEO
collector cut-off current
I_EBO
h_FE
V_CEsat
V_i(off)
V_i(on)
R1
RR-----21--
C_c
emitter cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
CONDITIONS
I_E = 0; V_CB = 50 V
I_B = 0; V_CE = 30 V
I_B = 0; V_CE = 30 V; T_j = 150 °C
I_C = 0; V_EB = 5 V
I_C = 5 mA; V_CE = 5 V
I_C = 10 mA; I_B = 0.5 mA
I_C = 100 µA; V_CE = 5 V
I_C = 5 mA; V_CE = 0.3 V
MIN. TYP. MAX. UNIT
−
−
100 nA
−
−
1
µA
−
−
50 µA
−
−
180 µA
60 −
−
−
−
150 mV
−
1.1 0.8 V
2.5 1.7 −
V
15.4 22 28.6 kΩ
0.8 1
1.2
I_E = i_e = 0; V_CB = 10 V; f = 1 MHz −
−
2.5 pF
1999 Apr 16
3