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PDTC114EK Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN resistor-equipped transistor | |||
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Philips Semiconductors
NPN resistor-equipped transistor
Product speciï¬cation
PDTC114EK
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
VI
IO
ICM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ⤠25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
â
â
â
MAX.
50
50
10
UNIT
V
V
V
â
+40
V
â
â10
V
â
100
mA
â
100
mA
â
250
mW
â65
+150
°C
â
150
°C
â65
+150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
collector cut-off current
IE = 0; VCB = 50 V
â
â
100 nA
ICEO
collector cut-off current
IB = 0; VCE = 30 V
â
â
1
µA
IB = 0; VCE = 30 V; Tj = 150 °C â
â
50
µA
IEBO
emitter cut-off current
IC = 0; VEB = 5 V
â
â
400 µA
hFE
DC current gain
IC = 5 mA; VCE = 5 V
30
â
â
VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA
â
â
150 mV
Vi(off)
input-off voltage
IC = 100 µA; VCE = 5 V
â
1.1 0.8 V
Vi(on)
input-on voltage
IC = 10 mA; VCE = 0.3 V
2.5 1.8 â
V
R1
input resistor
7
10
13
kâ¦
RR-----21--
resistor ratio
0.8 1
1.2
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz â
â
2.5 pF
1998 Nov 26
3
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