|
PDTA144ES Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP resistor-equipped transistor | |||
|
◁ |
Philips Semiconductors
PNP resistor-equipped transistor
Product speciï¬cation
PDTA144ES
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
VI
IO
ICM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ⤠25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
â
â
â
MAX.
â50
â50
â10
UNIT
V
V
V
â
+10
V
â
â40
V
â
â100
mA
â
â100
mA
â
500
mW
â65
+150
°C
â
150
°C
â65
+150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
250
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
ICEO
IEBO
hFE
VCEsat
Vi(off)
Vi(on)
R1
collector cut-off current
IE = 0; VCB = â50 V
â
collector cut-off current
IB = 0; VCE = â30 V
â
IB = 0; VCE = â30 V; Tj = 150 °C â
emitter cut-off current
IC = 0; VEB = â5 V
â
DC current gain
IC = â5 mA; VCE = â5 V
80
collector-emitter saturation voltage IC = â10 mA; IB = â0.5 mA
â
input-off voltage
IC = â100 µA; VCE = â5 V
â
input-on voltage
IC = â2 mA; VCE = â0.3 V
â3
input resistor
33
â
â100 nA
â
â1
µA
â
â50 µA
â
â90 µA
â
â
â
â150 mV
â1.2 â0.8 V
â1.6 â
V
47
61
kâ¦
RR-----21--
resistor ratio
0.8 1
1.2
Cc
collector capacitance
IE = ie = 0; VCB = â10 V; f = 1 MHz â
â
3
pF
1998 May 19
3
|
▷ |