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PDTA143EU Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP resistor-equipped transistor
Philips Semiconductors
PNP resistor-equipped transistor
Product specification
PDTA143EU
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
VI
IO
ICM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
MAX.
−50
−50
−10
UNIT
V
V
V
−
10
V
−
−30
V
−
−100 mA
−
−100 mA
−
200
mW
−65
+150 °C
−
150
°C
−65
+150 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
625
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
ICEO
collector cut-off current
collector cut-off current
IEBO
hFE
VCEsat
Vi(off)
Vi(on)
R1
RR-----21--
Cc
emitter cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
CONDITIONS
IE = 0; VCB = −50 V
IB = 0; VCE = −30 V
IB = 0; VCE = −30 V; Tj = 150 °C
IC = 0; VEB = −5 V
IC = −10 mA; VCE = −5 V
IC = −10 mA; IB = −0.5 mA
IC = −100 µA; VCE = −5 V
IC = −20 mA; VCE = −0.3 V
IE = ie = 0; VCB = −10 V; f = 1 MHz
MIN. TYP. MAX. UNIT
−
−
−100 nA
−
−
−1 µA
−
−
−50 µA
−
−
−0.9 mA
30 −
−
−
−
−150 mV
−
−1.1 −0.5 V
−2.5 −1.9 −
V
3.3 4.7 6.1 kΩ
0.8 1
1.2
−
−
3
pF
1999 Apr 13
3