PDTA114TU Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP resistor-equipped transistor

Philips Semiconductors
PNP resistor-equipped transistor
Product specification
PDTA114TU
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
625
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
I_CEO
collector cut-off current
collector cut-off current
I_EBO
h_FE
V_CEsat
R1
C_c
emitter cut-off current
DC current gain
collector-emitter saturation voltage
input resistor
collector capacitance
CONDITIONS
I_E = 0; V_CB = −50 V
I_B = 0; V_CE = −30 V
I_B = 0; V_CE = −30 V; T_j = 150 °C
I_C = 0; V_EB = −5 V
I_C = −1 mA; V_CE = −5 V
I_C = −10 mA; I_B = −0.5 mA
I_E = i_e = 0; V_CB = −10 V; f = 1 MHz
MIN. TYP. MAX. UNIT
−
−
−100 nA
−
−
−1 µA
−
−
−50 µA
−
−
−100 nA
200 −
−
−
−
−150 mV
7
10 13 kΩ
−
−
3
pF
handboo⁶k,⁰h⁰alfpage
hFE
400
200
MBK784
(1)
(2)
(3)
−1
handbook, halfpage
VCEsat
(V)
−10^−1
MBK783
(1)
(2)
(3)
0
−10^−1
−1
−10
−10²
IC (mA)
V_CE = −5 V.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −40 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
−10^−_−²_10−1
−1
−10
−10²
IC (mA)
I_C/I_B = 10.
(1) T_amb = 100 °C.
(2) T_amb = 25 °C.
(3) T_amb = −40 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
1999 Apr 13
3