PBYR245CT Datasheet, PDF (3/5 Pages) NXP Semiconductors – Rectifier diodes Schottky barrier

Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR245CT series
Forward dissipation, PF (W)
1
Vo = 0.27 V
Rs = 0.183 Ohms
0.8
0.6
0.1
0.2
PBYR245CT
D = 1.0
0.5
0.4
I
tp
D
=
tp
T
0.2
T
t
0
0
0.5
1
1.5
Average forward current, IF(AV) (A)
Fig.2. Maximum forward dissipation P_F = f(I_F(AV)) per
diode; square current waveform where
I_F(AV) =I_F(RMS) x √D.
1 ^{Forward dissipation, PF (W) PBYR245CT}
Vo = 0.27 V
Rs = 0.183 Ohms
0.8
0.6
4
2.8
2.2 ^1.9
0.4
a = 1.57
0.2
0
0
0.2
0.4
0.6
0.8
1
Average forward current, IF(AV) (A)
Fig.3. Maximum forward dissipation P_F = f(I_F(AV)) per
diode; sinusoidal current waveform where a = form
factor = I_F(RMS) / I_F(AV).
Forward current, IF (A)
3
Tj = 25 C
Tj = 125 C
2.5
PBYR245CT
2
typ
1.5
max
1
0.5
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4
Forward voltage, VF (V)
Fig.4. Typical and maximum forward characteristic
I_F = f(V_F); parameter T_j
10 ^{Reverse current, IR (mA)}
PBYR245CT
125 C
1
100 C
0.1 75 C
50 C
0.01
Tj = 25 C
0.001
0
25
50
Reverse voltage, VR (V)
Fig.5. Typical reverse leakage current per diode;
I_R = f(V_R); parameter T_j
Cd / pF
1000
PBYR245CT
100
10
1
10
100
VR / V
Fig.6. Typical junction capacitance per diode;
C_d = f(V_R); f = 1 MHz; T_j = 25˚C to 125 ˚C.
100 ^{Transient thermal impedance, Zth j-sp (K/W)}
10
1
0.1
P_D
tp
D
=
tp
T
0.01
1us
10us
T
t
100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s)
PBYR245CT
Fig.7. Transient thermal impedance; per diode;
Z_{th j-sp} = f(t_p).
July 1998
3
Rev 1.400