PBSS4330X Datasheet, PDF (3/12 Pages) NXP Semiconductors – 30 V, 3 A NPN low VCEsat (BISS) transistor

Philips Semiconductors
30 V, 3 A
NPN low V_CEsat (BISS) transistor
Product specification
PBSS4330X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
P_tot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
T_stg
T_j
T_amb
storage temperature
junction temperature
ambient temperature
CONDITIONS
open emitter
open base
open collector
note 4
limited by T_j(max)
T_amb ≤ 25 °C
note 1
note 2
note 3
note 4
MIN.
−
−
−
−
−
−
MAX.
50
30
6
3
5
0.5
UNIT
V
V
V
A
A
A
−
550
mW
−
1
W
−
1.4
W
−
1.6
W
−65
+150
°C
−
150
°C
−65
+150
°C
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm².
3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm².
4. Device mounted on a ceramic printed-circuit board 7 cm², single-sided copper, tin-plated.
2004 Dec 06
3