PBSS3540F Datasheet, PDF (3/8 Pages) NXP Semiconductors – 40 V low VCEsat PNP transistor

Philips Semiconductors
40 V low V_CEsat PNP transistor
Product specification
PBSS3540F
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-a}
thermal resistance from junction to ambient in free air
VALUE
500
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I_CBO
I_BEO
h_FE
V_CEsat
R_CEsat
V_BEsat
V_BEon
C_c
f_T
collector-base cut-off current
V_CB = −40 V; I_E = 0
−
−
−100 nA
V_CB = −40 V; I_E = 0; T_j = 150 °C −
−
−50 µA
emitter-base cut-off current
V_EB = −5 V; I_C = 0
−
−
−100 nA
DC current gain
V_CE = −2 V
I_C = −10 mA
200 −
−
I_C = −100 mA; note 1
150 −
−
I_C = −500 mA; note 1
40
−
−
collector-emitter saturation voltage I_C = −10 mA; I_B = −0.5 mA
−
−
−50 mV
I_C = −100 mA; I_B = −5 mA
−
−
−130 mV
I_C = −200 mA; I_B = −10 mA
−
−
−200 mV
I_C = −500 A; I_B = −50 mA; note 1 −
−
−350 mV
equivalent on-resistance
I_C = −500 mA; I_B = −50 mA; note 1 −
440 <700 mΩ
base-emitter saturation voltage I_C = −500 mA; I_B = −50 mA; note 1 −
−
−1.2 V
base-emitter turn-on voltage
V_CE = −2 V; I_C = −100 mA; note 1 −
−
−1.1 V
collector capacitance
V_CB = −10 V; I_E = I_e = 0; f = 1 MHz −
−
10
pF
transition frequency
I_C = −100 mA; V_CE = −5 V;
f = 100 MHz
100 300 −
MHz
Note
1. Pulse test: t_p ≤ 300 ms; δ ≤ 0.02.
2001 Jul 13
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