PBR951 Datasheet, PDF (3/16 Pages) NXP Semiconductors – UHF wideband transistor

Philips Semiconductors
UHF wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System IEC 134.
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
I_C
I_C(AV)
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
T_s = 60 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-s}
thermal resistance from junction
to soldering point; note 1
CONDITIONS
P_tot = 365 mW; T_s = 60 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector pin.
Product specification
PBR951
MIN.
−
−
−
−
−
−
−65
−
MAX. UNIT
20
V
10
V
1.5 V
100 mA
100 mA
365 mW
+150 °C
175 °C
VALUE
315
UNIT
K/W
1998 Aug 10
3