MMBTA92 Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP high-voltage transistor

Philips Semiconductors
PNP high-voltage transistor
Product specification
MMBTA92
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-a}
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
500
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
I_EBO
emitter cut-off current
h_FE
DC current gain
V_CEsat
V_BEsat
C_c
f_T
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
transition frequency
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
CONDITIONS
MIN.
I_E = 0; V_CB = −200 V
−
I_C = 0; V_EB = −3 V
−
V_CE = −10 V; note 1
I_C = −1 mA
25
I_C = −10 mA
40
I_C = −30 mA
25
I_C = −20 mA; I_B = −2 mA −
I_C = −20 mA; I_B = −2 mA −
I_E = i_e = 0; V_CB = −20 V; −
f = 1 MHz
I_C = −10 mA; V_CE = −20 V; 50
f = 100 MHz
MAX.
−250
−100
UNIT
nA
nA
−
−
−
−500
−900
6
−
mV
mV
pF
MHz
2000 Apr 11
3