MMBT3906 Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP switching transistor

Philips Semiconductors
PNP switching transistor
Product specification
MMBT3906
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-a}
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
500
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
I_CBO
I_EBO
h_FE
V_CEsat
V_BEsat
C_c
C_e
f_T
F
collector cut-off current
I_E = 0; V_CB = −30 V
−
emitter cut-off current
I_C = 0; V_EB = −6 V
−
DC current gain
V_CE = −1 V; (see Fig.2)
I_C = −0.1 mA
60
I_C = −1 mA
80
I_C = −10 mA
100
I_C = −50 mA
60
I_C = −100 mA
30
collector-emitter saturation I_C = −10 mA; I_B = −1 mA
−
voltage
I_C = −50 mA; I_B = −5 mA
−
base-emitter saturation
I_C = −10 mA; I_B = −1 mA
−
voltage
I_C = −50 mA; I_B = −5 mA
−
collector capacitance
emitter capacitance
transition frequency
I_E = i_e = 0; V_CB = −5 V; f = 1 MHz
−
I_C = i_c = 0; V_EB = −500 mV; f = 1 MHz −
I_C = −10 mA; V_CE = −20 V;
250
f = 100 MHz
noise figure
I_C = −100 µA; V_CE = −5 V; R_S = 1 kΩ; −
f = 10 Hz to 15.7 kHz
Switching times (between 10% and 90% levels); (see Fig.3)
t_on
turn-on time
t_d
delay time
t_r
rise time
t_off
turn-off time
t_s
storage time
t_f
fall time
I_Con = −10 mA; I_Bon = −1 mA;
−
I_Boff = 1 mA
−
−
−
−
−
MAX.
−50
−50
UNIT
nA
nA
−
−
300
−
−
−200
−200
−850
−950
4.5
10
−
4
mV
mV
mV
mV
pF
pF
MHz
dB
65
ns
35
ns
35
ns
300
ns
225
ns
75
ns
2000 Apr 11
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