LV2327E40R Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_CER
V_EBO
I_C
P_tot
T_stg
T_j
T_sld
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
soldering temperature
open emitter
open base
R_BE = 47 Ω
open collector
T_mb ≤ 75 °C
t ≤ 10 s; note 1
Note
1. At 0.3 mm from the case.
Product specification
LV2327E40R
MIN.
−
−
−
−
−
−
−65
−
−
MAX.
40
15
20
3
2
18
+200
200
235
UNIT
V
V
V
V
A
W
°C
°C
°C
1997 Feb 18
MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
3